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300mm H2 Ashing System (FUTAS)

Product Detail Information
  • FUTAS is the future generation Ashing system with H2 gas based plasma source that utilizes high concentration (up to 100%) H2 process gas for optimized polymer removal capability. The new process is critical for semiconductor manufacturing under the <3Xnm design rule where particle generation, oxidation, and substrate loss are minimize. A Multi-Source Plastform is designed for installing Hollow Cathode Plasma (HCP) source with H2-based process gas or Point Inductively Coupled Plasma (PICP) source with O2N2-based process gas to achieve the high density plasma for HDI process applications. Highest ashing rates can also be achieved through utilizing proprietary process gas chemistry (P-Chemistry).